Details

Autor(en) / Beteiligte

• Sellin, P.J.
• Davies, A.W.
• Lohstroh, A.
• Ozsan, M.E.
• Parkin, J.

Titel

Drift mobility and mobility-lifetime products in CdTe:Cl grown by the travelling heater method

Ist Teil von

• IEEE transactions on nuclear science, 2005-12, Vol.52 (6), p.3074-3078

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2005

Quelle

IEL

Beschreibungen/Notizen

• We report the electron and hole charge transport properties of semi insulating CdTe:Cl grown by the Travelling Heater Method (THM). An alpha-particle Time of Flight (TOF) method was used to measure electron and hole drift mobility, with room temperature values of 880 cm 2 /Vs for electrons and 90 cm 2 /Vs for holes. The variation in mobility was also investigated as a function of temperature, with electron and hole mobilities at 190 K of 1150 cm 2 /Vs and 20 cm 2 /Vs respectively. Using a Hecht analysis the electron and hole mobility-lifetime products were also measured over the same temperature range, with values at room temperature of 8times10 -4 cm 2 /V and 7times10 -5 cm 2 /V respectively. Time-resolved ion beam induced charge (IBIC) imaging was used to produce micrometer resolution maps of electron drift mobility and signal amplitude, which showed excellent spatial uniformity