Details

Autor(en) / Beteiligte

• Washington, L.
• Nouri, F.
• Thirupapuliyur, S.
• Eneman, G.
• Verheyen, P.
• Moroz, V.
• Smith, L.
• Xiaopeng Xu
• Kawaguchi, M.
• Huang, T.
• Ahmed, K.
• Balseanu, M.
• Li-Qun Xia
• Meihua Shen
• Yihwan Kim
• Rooyackers, R.
• Kristin De Meyer
• Schreutelkamp, R.

Titel

pMOSFET with 200% mobility enhancement induced by multiple stressors

Ist Teil von

• IEEE electron device letters, 2006-06, Vol.27 (6), p.511-513

Ort / Verlag

New York, NY: IEEE

Erscheinungsjahr

2006

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Xplore Digital Library

Beschreibungen/Notizen

• Recessed Si/sub 0.8/Ge/sub 0.2/ source/drain (S/D) and a compressive contact etch-stop layer have been successfully integrated resulting in nearly 200% improvement in hole mobility. This is the largest reported process-induced hole mobility enhancement to the authors' knowledge. This letter demonstrates that a drive-current improvement from recessed Si/sub 0.8/Ge/sub 0.2/ plus the compressive nitride layer are in fact additive. Furthermore, it shows that the mobility enhancement is a superlinear function of stress, leading to larger than additive gains in the drive current when combining several stress sources.