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Structural, dielectric and ferroelectric properties of tungsten (W) substituted SrBi
2(Ta
1−
x
W
x
)
2O
9 (SBTW) [
x=0.0, 0.025, 0.05, 0.075, 0.1 and 0.2] have been studied as a function of sintering temperature (1100–1250
°C). X-ray diffraction patterns confirm the single-phase layered perovskite structure formation up to
x=0.05 at all sintering temperatures. The present study reveals an optimum sintering temperature of 1200
°C for the best properties of SBTW samples. Maximum
T
c of ∼390
°C is observed for
x=0.20 sample sintered at 1200
°C. Peak-dielectric constant (
ε
r
) increases from ∼270 to ∼700 on increasing
x from 0.0 to 0.20 at 1200
°C sintering temperature. DC conductivity of the SBTW samples is nearly two to three orders lower than that of the pristine sample. Remnant polarization (
P
r) increases with the W content up to
x≤0.075. A maximum 2
P
r (∼25
μC/cm
2) is obtained with
x=0.075 sample sintered at 1200
°C. The observed behavior is explained in terms of improved microstructural features, contribution from the oxygen and cationic vacancies in SBTW. Such tungsten substituted samples sintered at 1200
°C exhibiting enhanced dielectric and ferroelectric properties should be useful for memory applications.