Details

Autor(en) / Beteiligte

• Thomas, S.M.
• Whall, T.E.
• Parker, E.H.C.
• Leadley, D.R.
• Lander, R.J.P.
• Vellianitis, G.
• Watling, J.R.

Titel

Improved effective mobility extraction in MOSFETs

Ist Teil von

• Solid-state electronics, 2009-12, Vol.53 (12), p.1252-1256

Ort / Verlag

Elsevier Ltd

Erscheinungsjahr

2009

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The standard method of extracting carrier effective mobility from electrical measurements on MOSFETs is reviewed and the assumptions implicit in this method are discussed. A novel technique is suggested that corrects for the difference in drain bias during IV and CV measurements. It is further shown that the lateral field and diffusion corrections, which are both commonly neglected, in fact cancel. The effectiveness of the proposed technique is demonstrated by application to data measured on a quasi-planar SOI finFET at 300 K and 4 K.