Details

Autor(en) / Beteiligte

• Helfrich, M.
• Hu, D.Z.
• Hendrickson, J.
• Gehl, M.
• Rülke, D.
• Gröger, R.
• Litvinov, D.
• Linden, S.
• Wegener, M.
• Gerthsen, D.
• Schimmel, T.
• Hetterich, M.
• Kalt, H.
• Khitrova, G.
• Gibbs, H.M.
• Schaadt, D.M.

Titel

Growth and annealing of InAs quantum dots on pre-structured GaAs substrates

Ist Teil von

• Journal of crystal growth, 2011-05, Vol.323 (1), p.187-190

Ort / Verlag

Amsterdam: Elsevier B.V

Erscheinungsjahr

2011

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• In this study, we investigated the effect of in situ annealing on InAs quantum dots site-selectively grown on pre-structured GaAs substrates. A morphological transition is observed with original double dots merging into one single dot during annealing. This is accompanied by a reduction of quantum dots originally nucleating between defined sites. The photoluminescence intensity of annealed site-selective quantum dots is compared to annealed self-assembled dots with linewidths of single dot emission of about 170 and 81μeV, respectively. UV-ozone cleaning is used to optimize the sample cleaning prior to quantum dot growth.