Details

Autor(en) / Beteiligte

• Xiang, Du
• Han, Cheng
• Wu, Jing
• Zhong, Shu
• Liu, Yiyang
• Lin, Jiadan
• Zhang, Xue-Ao
• Ping Hu, Wen
• Özyilmaz, Barbaros
• Neto, A H Castro
• Wee, Andrew Thye Shen
• Chen, Wei

Titel

Surface transfer doping induced effective modulation on ambipolar characteristics of few-layer black phosphorus

Ist Teil von

• Nature communications, 2015-03, Vol.6 (1), p.6485-6485, Article 6485

Ort / Verlag

England: Nature Publishing Group

Erscheinungsjahr

2015

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Black phosphorus, a fast emerging two-dimensional material, has been configured as field effect transistors, showing a hole-transport-dominated ambipolar characteristic. Here we report an effective modulation on ambipolar characteristics of few-layer black phosphorus transistors through in situ surface functionalization with caesium carbonate (Cs2CO3) and molybdenum trioxide (MoO3), respectively. Cs2CO3 is found to strongly electron dope black phosphorus. The electron mobility of black phosphorus is significantly enhanced to ~27 cm(2) V(-1) s(-1) after 10 nm Cs2CO3 modification, indicating a greatly improved electron-transport behaviour. In contrast, MoO3 decoration demonstrates a giant hole-doping effect. In situ photoelectron spectroscopy characterization reveals significant surface charge transfer occurring at the dopants/black phosphorus interfaces. Moreover, the surface-doped black phosphorus devices exhibit a largely enhanced photodetection behaviour. Our findings coupled with the tunable nature of the surface transfer doping scheme ensure black phosphorus as a promising candidate for further complementary logic electronics.