Details

Autor(en) / Beteiligte

• Lee, Jeong-Hwan
• Cheng, Shuo-Hsien
• Yoo, Seung-Jun
• Shin, Hyun
• Chang, Jung-Hung
• Wu, Chih-I
• Wong, Ken-Tsung
• Kim, Jang-Joo

Titel

An Exciplex Forming Host for Highly Efficient Blue Organic Light Emitting Diodes with Low Driving Voltage

Ist Teil von

• Advanced functional materials, 2015-01, Vol.25 (3), p.361-366

Ort / Verlag

Blackwell Publishing Ltd

Erscheinungsjahr

2015

Quelle

Wiley-Blackwell Journals

Beschreibungen/Notizen

• The exciplex forming co‐host with phosphorescent dopant system has potential to realize highly efficient phosphorescent organic light emitting didoes (PhOLEDs). However, the exciplex forming co‐host for blue phosphorescent OLEDs has been rarely introduced because of higher triplet level of the blue dopant than green and red dopants. In this work, a novel exciplex forming co‐host with high triplet energy level is developed by mixing a phosphine oxide based electron transporting material, PO‐T2T, and a hole transporting material, N,N′‐dicarbazolyl‐3,5‐benzene (mCP). Photo‐physical analysis shows that the exciplexes are formed efficiently in the host and the energy transfer from the exciplex to blue phosphorescent dopant (iridium(III)bis[(4,6‐difluorophenyl)‐pyridinato‐N,C2′]picolinate; FIrpic) is also efficient, enabling the triplet harvest without energy loss. As a result, an unprecedented high performance blue PhOLED with the exciplex forming co‐host is demonstrated, showing a maximum external quantum efficiency (EQE) of 30.3%, a maximum power efficiency of 66 lm W−1, and low driving voltage of 2.75 at 100 cd m−2, 3.29 V at 1000 cd m−2, and 4.65 V at 10 000 cd m−2, respectively. The importance of the exciton confinement in the exciplex forming co‐host is further investigated which is directly related to the performance of PhOLEDs. A novel exciplex forming host, composed of mCP and PO‐T2T, is realized. Using the host and efficient energy transfer to FIrpic, unprecedented high performance blue phosphorescent OLED is demonstrated, showing a maximum EQE of 30.3%, power efficiency of 66 lm W−1, and extremely low operating voltages of 2.75 at 100 cd m−2, and 4.65 V at 10 000 cd m−2.