Details

Autor(en) / Beteiligte

• Shin, In-Su
• Lee, Donghyun
• Lee, Keon-Hoon
• You, Hyosang
• Moon, Dae Young
• Park, Jinsub
• Nanishi, Yasuishi
• Yoon, Euijoon

Titel

Growth of GaN layer with preserved nano-columnar low temperature GaN buffer to reduce the wafer bowing

Ist Teil von

• Thin solid films, 2013-11, Vol.546, p.118-123

Ort / Verlag

Amsterdam: Elsevier B.V

Erscheinungsjahr

2013

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• In this study, a nano-columnar low-temperature (LT) GaN buffer was used to reduce the wafer bowing of a GaN layer grown on a sapphire substrate. A significant reduction in the extent of wafer bowing was observed for the GaN layer for the preserved nano-columnar LT GaN layer when compared with the conventional GaN layer. These results suggest that the preserved nano-columnar structure helped relax the GaN layer strain energy associated with thermal expansion mismatch. The flow of TMGa during the temperature ramp-up from LT to high-temperature was found to be an important process parameter to preserving the nano-columnar structure of LT GaN, resulting in less bowed GaN on sapphire. •Nano-columnar microstructure of low-temperature GaN was preserved in GaN layer.•Flow of TMGa during temperature ramp-up was essential for the microstructure.•It induced tensile stress in GaN layer, resulting in reduced wafer bowing.