Thin solid films, 2014-07, Vol.563, p.40-43
2014
Volltextzugriff (PDF)
Details
- Autor(en) / Beteiligte
- Titel
- Postoxidation thermal annealing effects of liquid phase deposited TiO2 on (NH4)2Sx-treated AlGaAs
- Ist Teil von
- Thin solid films, 2014-07, Vol.563, p.40-43
- Ort / Verlag
- Amsterdam: Elsevier B.V
- Erscheinungsjahr
- 2014
- Quelle
- Alma/SFX Local Collection
- Beschreibungen/Notizen
- Liquid phase deposition (LPD) was performed to fabricate titanium dioxide (TiO2) on AlGaAs by using ammonium sulfide pretreatment. In addition, the study investigated how postoxidation rapid thermal annealing (RTA) affected the LPD-TiO2 on (NH4)2Sx-treated AlGaAs. The deposition rate of the as-deposited LPD-TiO2 for the 10min 5% (NH4)2Sx-treated AlGaAs was approximately 126nm/h. Following the 10min 5% (NH4)2Sx pretreatment and a postoxidation RTA at 350°C for 1min, the root mean square value, leakage current density at 0MV/cm, interface trap density, and flat-band voltage shift were improved to 6.20, 5.64×10−8A/cm2, 6.48×1011cm−2eV−1, and 1.5V, respectively. •Effects of thermal annealing of TiO2 films on (NH4)2Sx-treated AlGaAs.•Electrical properties of the deposited TiO2 can be improved by thermal annealing.•Postoxidation annealing does not degrade the performance of (NH4)2Sx pretreatment.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0040-6090eISSN: 1879-2731DOI: 10.1016/j.tsf.2014.04.010Titel-ID: cdi_proquest_miscellaneous_1660038141
- Format
- –
- Schlagworte
- AlGaAs, Aluminum gallium arsenides, Annealing, Cross-disciplinary physics: materials science, rheology, Density, Deposition, Exact sciences and technology, Leakage current, Liquid phase deposition (LPD), Liquid phase epitaxy, deposition from liquid phases (melts, solutions, and surface layers on liquids), Materials science, Methods of deposition of films and coatings, film growth and epitaxy, Physics, Pretreatment, Rapid thermal annealing (RTA), TiO2, Titanium dioxide, Voltage