Details

Autor(en) / Beteiligte

• Tulina, N.А.
• Rossolenko, А.N.
• Borisenko, I.Yu
• Shmytko, I.М.
• Ionov, А.М.
• Ivanov, А.А.

Titel

Realization of rectifying and resistive switching behaviors of mesoscopic niobium oxide-based structures

Ist Teil von

• Materials letters, 2014-12, Vol.136, p.404-406

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

2014

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We address bipolar resistive switching effects in structures based on oxides of transition metals which are promising for applications in modern memory devices. Mesoscopic niobium oxide film heterostrucures have been produced. The current–voltage characteristics of the heterostructures based on amorphous films of anodized niobium oxide show a diode character with a weak BRS effect that is more pronounced in structures based on crystalline niobium oxide films. Analysis of the conductivity mechanisms in the heterostructures obtained suggests that the diode behavior and the existence of bistable resistance states are related to modulation of a Schottky barrier formed by a niobium oxide layer with a variable resistance in the metal–oxide interface. •Mesoscale niobium oxide heterostructures with bipolar resistive switchings (BRS) are obtained.•The CVC of heterocontacts exhibiting the BRS effect has a diode character.•The diode behavior and the existence of BRS are related to modulation of a Schottky barrier.•The field character of switching is indirectly supported by current transport.•The structures CVC with BRS exhibit Poole–Frenkel-type current contributions.