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Details

Autor(en) / Beteiligte
Titel
Development of n super(+)-in-p large-area silicon microstrip sensors for very high radiation environments - ATLAS12 design and initial results
Ist Teil von
  • Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2014-11, Vol.765, p.80-90
Erscheinungsjahr
2014
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
  • We have been developing a novel radiation-tolerant n super(+)-in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float-zone wafers, where large-area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 mu m and slim edge space of 450 mu m, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers.
Sprache
Englisch
Identifikatoren
ISSN: 0168-9002
DOI: 10.1016/j.nima.2014.06.086
Titel-ID: cdi_proquest_miscellaneous_1651386274

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