Details

Autor(en) / Beteiligte

• Unno, Y
• Edwards, SO
• Pyatt, S
• Thomas, J P
• Wilson, JA
• Kierstead, J
• Lynn, D
• Carter, J R
• Hommels, LBA
• Robinson, D
• Bloch, I
• Gregor, I M
• Tackmann, K
• Betancourt, C
• Jakobs, K
• Kuehn, S
• Mori, R
• Parzefall, U
• Wiik-Fucks, L
• Clark, A
• Ferrere, D
• Sevilla, SGonzalez
• Ashby, J
• Blue, A
• Bates, R
• Buttar, C
• Doherty, F
• Eklund, L
• McMullen, T
• McEwan, F
• O'Shea, V
• Kamada, S
• Yamamura, K
• Ikegami, Y
• Nakamura, K
• Takubo, Y
• Nishimura, R
• Takashima, R
• Chilingarov, A
• Fox, H
• Affolder, A A
• Allport, P P
• Casse, G
• Dervan, P
• shaw, D
• Greenall, A
• Wonsak, S
• Wormald, M
• Cindro, V
• Kramberger, G

Titel

Development of n super(+)-in-p large-area silicon microstrip sensors for very high radiation environments - ATLAS12 design and initial results

Ist Teil von

• Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2014-11, Vol.765, p.80-90

Erscheinungsjahr

2014

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We have been developing a novel radiation-tolerant n super(+)-in-p silicon microstrip sensor for very high radiation environments, aiming for application in the high luminosity large hadron collider. The sensors are fabricated in 6 in., p-type, float-zone wafers, where large-area strip sensor designs are laid out together with a number of miniature sensors. Radiation tolerance has been studied with ATLAS07 sensors and with independent structures. The ATLAS07 design was developed into new ATLAS12 designs. The ATLAS12A large-area sensor is made towards an axial strip sensor and the ATLAS12M towards a stereo strip sensor. New features to the ATLAS12 sensors are two dicing lines: standard edge space of 910 mu m and slim edge space of 450 mu m, a gated punch-through protection structure, and connection of orphan strips in a triangular corner of stereo strips. We report the design of the ATLAS12 layouts and initial measurements of the leakage current after dicing and the resistivity of the wafers.