Sie befinden Sich nicht im Netzwerk der Universität Paderborn. Der Zugriff auf elektronische Ressourcen ist gegebenenfalls nur via VPN oder Shibboleth (DFN-AAI) möglich. mehr Informationen...
[Display omitted]
•Comparatively inexpensive method to realize ZnSe:Te scintillating film.•Annealing on the deposited film.•Effect of annealing on crystallinity of the deposited films.•Effect of annealing on optical and electronic properties of the deposited film.
ZnSe having a wide but direct bandgap (bulk band gap 2.7eV) is very efficient for detecting nuclear radiations by using its scintillation property. With a high absolute light output and radiation spectra which match well with Si-photodiode spectral sensitivity, ZnSe scintillators have adequately minimized the gap between “scintillator-photodiode” series for modern radiation detectors. Promising features like long decay time and high values of intrinsic radiation absorption make ZnSe based scintillators a very interesting research filed. Here in this report, we investigate an inexpensive and easy method to realize ZnSe:Te film on a quartz substrate. ZnSe:Te film is deposited using a thermal evaporator using ZnSe and ZnTe powders as raw materials to start with. After the deposition, the samples are exposed to a thermal annealing step for 1h. The temperatures are kept at 624, 674 and 724K. We have confirmed presence of a preferred [111] oriented polycrystalline ZnSe:Te thin films by XRD experiments. Photoluminescence experiment using a He:Cd laser at 324nm at low temperature (8K) reports an emission at 2.54eV due to non-equilibrium carrier plasma.