Details

Autor(en) / Beteiligte

• Dong, P
• Hu, T-C
• Zhang, L
• Dinu, M
• Kopf, R
• Tate, A
• Buhl, L
• Neilson, D T
• Luo, X
• Liow, T-Y
• Lo, G-Q
• Chen, Y-K

Titel

1.9 mu m hybrid silicon/III-V semiconductor laser

Ist Teil von

• Electronics letters, 2013-05, Vol.49 (10), p.1-1

Erscheinungsjahr

2013

Quelle

EZB Electronic Journals Library

Beschreibungen/Notizen

• A 1.9 mu m hybrid silicon/III-V laser based on a wafer bonding technique is reported. The gain materials are InGaAs multiple quantum wells grown on InP substrate, with strain compensation between barriers and wells. The III-V wafer is bonded to a silicon-on-insulator wafer with processed silicon waveguides and transition tapers. Laser emission with a threshold current of 95 mA at room temperature and 45 mA at 5 degree C is demonstrated.