Details

Autor(en) / Beteiligte

• Dumas, D C S
• Gallacher, K
• Rhead, S
• Myronov, M
• Leadley, D R
• Paul, D J

Titel

Ge/SiGe quantum confined Stark effect electro-absorption modulation with low voltage swing at λ = 1550 nm

Ist Teil von

• Optics express, 2014-08, Vol.22 (16), p.19284-19292

Ort / Verlag

United States

Erscheinungsjahr

2014

Quelle

Elektronische Zeitschriftenbibliothek (Open access)

Beschreibungen/Notizen

• Low-voltage swing (≤1.0 V) high-contrast ratio (6 dB) electro-absorption modulation covering 1460 to 1560 nm wavelength has been demonstrated using Ge/SiGe quantum confined Stark effect (QCSE) diodes grown on a silicon substrate. The heterolayers for the devices were designed using an 8-band k.p Poisson-Schrödinger solver which demonstrated excellent agreement with the experimental results. Modelling and experimental results demonstrate that by changing the quantum well width of the device, low power Ge/SiGe QCSE modulators can be designed to cover the S- and C-telecommunications bands.