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Carbon (New York), 2014-09, Vol.76, p.459-463

2014

Autor(en) / Beteiligte

Titel

Forming-free resistive switching in a nanoporous nitrogen-doped carbon thin film with ready-made metal nanofilaments

Ist Teil von

Ort / Verlag

Kidlington: Elsevier Ltd

Erscheinungsjahr

2014

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

An amorphous carbon thin film, with through-pores of several tens of nanometers in size, has been synthesized by annealing magnetron sputtered nitrogen-doped carbon thin films at elevated temperature in an inert atmosphere. Based on this nanoporous carbon film, we first report forming-free resistive switching in a two terminal device containing ready-made metal nanofilaments. Such nanoporous carbon-based resistance memory device shows low operation voltages and good endurance and retention performance.

Sprache: Englisch
Identifikatoren: ISSN: 0008-6223
eISSN: 1873-3891
DOI: 10.1016/j.carbon.2014.04.091
Titel-ID: cdi_proquest_miscellaneous_1567091701

Format: –
Schlagworte: Carbon, Chemistry, Cold working, work hardening, annealing, quenching, tempering, recovery, and recrystallization, textures, Colloidal state and disperse state, Condensed matter: structure, mechanical and thermal properties, Cross-disciplinary physics: materials science, rheology, Data storage, Deposition by sputtering, Exact sciences and technology, General and physical chemistry, Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties, Materials science, Memory devices, Methods of deposition of films and coatings, film growth and epitaxy, Nanostructure, Physics, Porous materials, Surfaces and interfaces, thin films and whiskers (structure and nonelectronic properties), Switching, Terminals, Thin films, Treatment of materials and its effects on microstructure and properties, Voltage

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