Details

Autor(en) / Beteiligte

• Ye, J. T.
• Zhang, Y. J.
• Akashi, R.
• Bahramy, M. S.
• Arita, R.
• Iwasa, Y.

Titel

Superconducting Dome in a Gate-Tuned Band Insulator

Ist Teil von

• Science (American Association for the Advancement of Science), 2012-11, Vol.338 (6111), p.1193-1196

Ort / Verlag

Washington, DC: American Association for the Advancement of Science

Erscheinungsjahr

2012

Quelle

American Association for the Advancement of Science

Beschreibungen/Notizen

• A dome-shaped superconducting region appears in the phase diagrams of many unconventional superconductors. In doped band insulators, however, reaching optimal superconductivity by the fine-tuning of carriers has seldom been seen. We report the observation of a superconducting dome in the temperature—carrier density phase diagram of MoS₂, an archetypal band insulator. By quasi-continuous electrostatic carrier doping achieved through a combination of liquid and solid gating, we revealed a large enhancement in the transition temperature T c occurring at optimal doping in the chemically inaccessible low-carrier density regime. This observation indicates that the superconducting dome may anse even in doped band insulators.