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The Role of Surface Oxygen in the Growth of Large Single-Crystal Graphene on Copper
Ist Teil von
Science (American Association for the Advancement of Science), 2013-11, Vol.342 (6159), p.720-723
Ort / Verlag
Washington, DC: American Association for the Advancement of Science
Erscheinungsjahr
2013
Quelle
Science Online_科学在线
Beschreibungen/Notizen
The growth of high-quality single crystals of graphene by chemical vapor deposition on copper (Cu) has not always achieved control over domain size and morphology, and the results vary from lab to lab under presumably similar growth conditions. We discovered that oxygen (O) on the Cu surface substantially decreased the graphene nucleation density by passivating Cu surface active sites. Control of surface O enabled repeatable growth of centimeter-scale single-crystal graphene domains. Oxygen also accelerated graphene domain growth and shifted the growth kinetics from edge-attachment-limited to diffusion-limited. Correspondingly, the compact graphene domain shapes became dendritic. The electrical quality of the graphene films was equivalent to that of mechanically exfoliated graphene, in spite of being grown in the presence of O.