Details

Autor(en) / Beteiligte

• De Luca, M
• Polimeni, A
• Fonseka, H. A
• Meaney, A. J
• Christianen, P. C. M
• Maan, J. C
• Paiman, S
• Tan, H. H
• Mura, F
• Jagadish, C
• Capizzi, M

Titel

Magneto-Optical Properties of Wurtzite-Phase InP Nanowires

Ist Teil von

• Nano letters, 2014-08, Vol.14 (8), p.4250-4256

Ort / Verlag

Washington, DC: American Chemical Society

Erscheinungsjahr

2014

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The possibility to grow in zincblende (ZB) and/or wurtzite (WZ) crystal phase widens the potential applications of semiconductor nanowires (NWs). This is particularly true in technologically relevant III–V compounds, such as GaAs, InAs, and InP, for which WZ is not available in bulk form. The WZ band structure of many III–V NWs has been widely studied. Yet, transport (that is, carrier effective mass) and spin (that is, carrier g-factor) properties are almost experimentally unknown. We address these issues in a well-characterized material: WZ indium phosphide. The value and anisotropy of the reduced mass (μexc) and g-factor (g exc) of the band gap exciton are determined by photoluminescence measurements under intense magnetic fields (B, up to 28 T) applied along different crystallographic directions. μexc is 14% greater in WZ NWs than in a ZB bulk reference and it is 6% greater in a plane containing the WZ ĉ axis than in a plane orthogonal to ĉ. The Zeeman splitting is markedly anisotropic with g exc = |g e| = 1.4 for B⊥ĉ (where g e is the electron g-factor) and g exc = |g e – g h,//| = 3.5 for B//ĉ (where g h,// is the hole g-factor). A noticeable B-induced circular dichroism of the emitted photons is found only for B//ĉ, as expected in WZ-phase materials.