Details

Autor(en) / Beteiligte

• Awasthi, Vishnu
• Pandey, Sushil K.
• Pandey, Saurabh K.
• Verma, Shruti
• Gupta, Mukul
• Mukherjee, Shaibal

Titel

Growth and characterizations of dual ion beam sputtered CIGS thin films for photovoltaic applications

Ist Teil von

• Journal of materials science. Materials in electronics, 2014-07, Vol.25 (7), p.3069-3076

Ort / Verlag

Boston: Springer US

Erscheinungsjahr

2014

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The growth of CIGS thin films on soda-lime glass substrates at different substrate temperatures by dual ion beam sputtering system in a single-step route from a single quaternary sputtering target with the composition of Cu (In 0.70 Ga 0.30 ) Se 2 was reported. The effects of the substrate temperature on structural, optical, morphological and electrical properties of CIGS films were investigated. Stoichiometry of one such film was investigated by X-ray photoelectron spectroscopy. All CIGS films had demonstrated a strong (112) orientation located at 2θ ~26.70 o , which indicated the chalcopyrite structure of films. The value of full-width at half-maximum of (112) peak was reduced from 0.58° to 0.19° and crystallite size was enlarged from 14.98 to 43.05 nm as growth temperature was increased from 100 to 400 °C. However, atomic force microscope results showed a smooth and uniform surface at lower growth temperature and the surface roughness was observed to increase with increasing growth temperature. Hall measurements exhibited the minimum film resistivity of 0.09 Ω cm with a hole concentration of 2.42 × 10 18  cm −3 and mobility of 28.60 cm 2  V −1  s −1 for CIGS film grown at 100 °C. Film absorption coefficient was found to enhance nominally from 1 × 10 5 to 2.3 × 10 5  cm −1 with increasing growth temperature from 100 to 400 °C.