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Characteristics of large-scale nanohole arrays for thin-silicon photovoltaics
Progress in photovoltaics, 2014-04, Vol.22 (4), p.452-461
Chen, Ting-Gang
Yu, Peichen
Chen, Shih-Wei
Chang, Feng-Yu
Huang, Bo-Yu
Cheng, Yu-Chih
Hsiao, Jui-Chung
Li, Chi-Kang
Wu, Yuh-Renn
2014
Volltextzugriff (PDF)
Details
Autor(en) / Beteiligte
Chen, Ting-Gang
Yu, Peichen
Chen, Shih-Wei
Chang, Feng-Yu
Huang, Bo-Yu
Cheng, Yu-Chih
Hsiao, Jui-Chung
Li, Chi-Kang
Wu, Yuh-Renn
Titel
Characteristics of large-scale nanohole arrays for thin-silicon photovoltaics
Ist Teil von
Progress in photovoltaics, 2014-04, Vol.22 (4), p.452-461
Ort / Verlag
Bognor Regis: Blackwell Publishing Ltd
Erscheinungsjahr
2014
Quelle
Wiley-Blackwell Journals
Beschreibungen/Notizen
ABSTRACT Nanostructured crystalline silicon is promising for thin‐silicon photovoltaic devices because of reduced material usage and wafer quality constraint. This paper presents the optical and photovoltaic characteristics of silicon nanohole (SiNH) arrays fabricated using polystyrene nanosphere lithography and reactive‐ion etching (RIE) techniques for large‐area processes. A post‐RIE damage removal etching is subsequently introduced to mitigate the surface recombination issues and also suppress the surface reflection due to modifications in the nanohole sidewall profile, resulting in a 19% increase in the power conversion efficiency. We show that the damage removal etching treatment can effectively recover the carrier lifetime and dark current–voltage characteristics of SiNH solar cells to resemble the planar counterpart without RIE damages. Furthermore, the reflectance spectra exhibit broadband and omnidirectional anti‐reflective properties, where an AM1.5 G spectrum‐weighted reflectance achieves 4.7% for SiNH arrays. Finally, a three‐dimensional optical modeling has also been established to investigate the dimension and wafer thickness dependence of light absorption. We conclude that the SiNH arrays reveal great potential for efficient light harvesting in thin‐silicon photovoltaics with a 95% material reduction compared to a typical cell thickness of 200 µm. Copyright © 2012 John Wiley & Sons, Ltd. This paper presents the optical and photovoltaic characteristics of silicon nanohole arrays fabricated using polystyrene nanosphere lithography and reactive‐ion etching techniques for large‐area processes. A damage removal etching is subsequently introduced to mitigate the surface recombination issues and also suppress the surface reflection due to modifications in the nanohole sidewall profile, resulting in a 19% increase in the power conversion efficiency. Silicon nanohole arrays reveal great potential for efficient light harvesting in thin‐silicon photovoltaics.
Sprache
Englisch
Identifikatoren
ISSN: 1062-7995
eISSN: 1099-159X
DOI: 10.1002/pip.2291
Titel-ID: cdi_proquest_miscellaneous_1531012841
Format
–
Schlagworte
anti-reflection
,
Applied sciences
,
Arrays
,
Damage
,
Energy
,
Etching
,
Exact sciences and technology
,
Lithography
,
Nanostructure
,
Natural energy
,
photovoltaic
,
Photovoltaic cells
,
Photovoltaic conversion
,
Silicon
,
Solar cells
,
Solar cells. Photoelectrochemical cells
,
Solar energy
,
sub-wavelength structures
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