Details

Autor(en) / Beteiligte

• Feng, Z.-S.
• Guo, J.
• Xie, J.-J.
• Zhang, L.-M.
• Gao, J.-Y.
• Andreev, Yu.M.
• Izaak, T.I.
• Kokh, K.A.
• Lanskii, G.V.
• Shaiduko, A.V.
• Shabalina, A.V.
• Svetlichnyi, V.A.

Titel

GaSe:Er3+ crystals for SHG in the infrared spectral range

Ist Teil von

• Optics communications, 2014-05, Vol.318, p.205-211

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

2014

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Centimeter-sized Er-doped single crystals were grown from the melts GaSe:Er(0.025, 0.1, 0.5, 1 and 2at%) by modified vertical Bridgman technology. Real Er content is ascertained as 0.009, 0.019, 0.033, 0.042 and 0.048at%, respectively. Solubility of Er in GaSe does not exceed 5×10−4. Optimal doping of 0.033at% of Er was established from SHG experiment. Improved optical quality is identified as a reason of increased nonlinearity for about 24% to that in pure GaSe. New Raman scattering band is found at 2900cm−1 that properly related to 4F9/2→4I9/2 transition of Er3+ ion.