Details

Autor(en) / Beteiligte

• Kemei, S.K.
• Kirui, M.S.K.
• Ndiritu, F.G.
• Odhiambo, P.M.
• Ngumbu, R.G.
• Leite, D.M.G.
• Pereira, A.L.J.

Titel

Storage moduli, loss moduli and damping factor of GaAs and Ga1−xMnxAs thin films using DMA 2980

Ist Teil von

• Materials science in semiconductor processing, 2014-04, Vol.20, p.23-26

Ort / Verlag

Kidlington: Elsevier Ltd

Erscheinungsjahr

2014

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The spin injector part of spintronic FET and diodes suffers from fatigue due to rising heat on the depletion layer. In this study the stiffness of Ga1−xMnxAs spin injector in terms of storage modulus with respect to a varying temperature, 45°C≤T≤70°C was determined. It was observed that the storage modulus for MDLs (Manganese Doping Levels) of 0%, 1% and 10% decreased with increase in temperature while that with MDLs of 20% and 50% increase with increase in temperature. MDLs of 20% and 50% appear not to allow for damping but MDLs ≤20% allow damping at temperature range of 45°C≤T≤70°C. The magnitude of storage moduli of GaAs is smaller than that for ferromagnetic Ga1−xMnxAs systems. The loss moduli for GaAs were found to reduce with increase in temperature. Its magnitude of reducing gradient is smaller than Ga1−xMnxAs systems. The two temperature extremes show a general reduction in loss moduli for different MDLs at the study temperature range. From damping factor analysis, damping factors for ferromagnetic Ga1−xMnxAs was found to increase with decrease in MDLs contrary to GaAs which recorded the largest damping factor at 45°C≤T≤70°C. Hence, MDL of 20% shows little damping followed by 50% while MDL of 0% has the most damping in an increasing trend with temperature.