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Application of hard X-ray photoelectron spectroscopy to electronic structure measurements for various functional materials
Ist Teil von
Journal of electron spectroscopy and related phenomena, 2013-10, Vol.190, p.235-241
Ort / Verlag
Elsevier B.V
Erscheinungsjahr
2013
Link zum Volltext
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
► High-resolution hard X-ray photoemission has been developed at BL15XU of SPring-8. ► ZnO single crystal showed a polarity dependence on the valence band spectrum. ► Mn doped titania nanosheets showed the mixed-valence states for the doped Mn ions. ► The interface electronic structure of Pt/HfO2/Pt was studied under device operation. ► Bulk and interface valence band structures of MgO/Co2MnSi were similar each other.
The revolver undulator beamline BL15XU at SPring-8 has been constructed by National Institute for Materials Science (NIMS). We have started hard X-ray photoemission experiments for various functional materials to measure the bulk-sensitive and buried interface electronic structures at BL15XU of SPring-8 since 2006. In this paper we report the performance of the NIMS contract beamline for hard X-ray photoelectron spectroscopy (HAXPES) and recent HAXPES results for several functional materials. By utilizing the large probing depth of HAXPES, it is possible to measure bulk and buried interface electronic structures of solids. We also describe the perspectives on HAXPES at the NIMS contract beamline.