Details

Autor(en) / Beteiligte

• Ghosh, Tushar
• Basak, Durga
• Razykov, TM

Titel

Enhanced mobility in visible-to-near infrared transparent Al-doped ZnO films

Ist Teil von

• Solar energy, 2013-10, Vol.96, p.152-158

Ort / Verlag

Kidlington: Elsevier Ltd

Erscheinungsjahr

2013

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The multilayered annealed Zn/AZO film maintains very high transparency in the VIS-to-NIR region and also shows very high mobility 46.8cm2/Vs and resistivity 2.43×10−4Ω-cm which indicates its suitability in solar cells as TCO. [Display omitted] •Zn/AZO multilayered annealed films show high transparency in VIS-to-NIR.•The film shows high mobility value of 46.8cm2/Vs.•The film shows low resistivity value of 2.43×10−4Ω-cm.•The Figure of merit of the film is 8.6×10−2Ω−1 which is quite high. A novel technique of depositing multilayered films by introducing metal Zn layers in between Al-doped ZnO (AZO) films by using RF and DC magnetron sputtering has been proposed to enhance the electrical conductivity through mobility enhancement. The multilayered Zn/AZO films when annealed at 823K, not only maintains high transparency in the visible-to-near infrared region but also shows very high mobility of 46cm2/Vs which is thirteen times more than that of the AZO film and resistivity as low as 2.43×10−4Ω-cm. The highest figure of merit value is 8.6×10−2Ω−1 which is more than double to that of the value of AZO film suggesting that these Zn/AZO films are very promising for solar cell applications.