Details

Autor(en) / Beteiligte

• Karlina, L B
• Vlasov, A S
• Ber, B Y
• Kazanthev, DYu
• Marukhina, E P

Titel

Surfactant effects on GaAsaGe heterostructures

Ist Teil von

• Journal of crystal growth, 2013-10, Vol.380, p.138-142

Erscheinungsjahr

2013

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• A study of the effect of isoelectronic surfactants (In and P) on the photoluminescence and photovoltaic characteristics of GaAsaGe heterostructures is presented. The surfactants were introduced into the structure by simultaneous post-growth diffusion. A GaAs photoluminescence spectra analysis was performed via a layer-by-layer etching procedure. It is shown that the effect of the surfactants is observed over a wide concentration range from 3A1017 to 1A1020 cma3. The effects of the In and P passivation of nonradiative recombination centers are observed. A pan junction was formed via phosphorus diffusion. PV conversion efficiency of 3.2% for the 900a1840 nm wavelength region has been registered under 40a400x concentrated sunlight (AM1.5D low-AOD).