Details

Autor(en) / Beteiligte

• Hospodková, A.
• Zíková, M.
• Pangrác, J.
• Oswald, J.
• Kuldová, K.
• Vyskočil, J.
• Hulicius, E.

Titel

Graded GaAsSb strain reducing layers covering InAs/GaAs quantum dots

Ist Teil von

• Journal of crystal growth, 2013-05, Vol.370, p.303-306

Ort / Verlag

Amsterdam: Elsevier B.V

Erscheinungsjahr

2013

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We have grown new InAs/GaAs quantum dot (QD) structures with graded Sb concentration of GaAs(1−x)Sbx strain reducing layer (SRL). New types of GaAsSb SRLs with graded concentration of Sb are theoretically and experimentally studied. We compare properties of three different Sb concentration gradients in SRL, constant, increasing and decreasing during the growth. Both types of non-constant gradients help us to prevent transition of the InAs(QD)/GaAsSb(SRL) heterojunction from type I to type II, to increase emission wavelength and to retain high luminescence intensity of these types of QD structures. Comparison of photoluminescence of samples with different concentration gradients and similar average Sb concentration in SRLs is shown. The longest wavelength of type I ground state transition was achieved on sample with decreasing gradation of Sb content in SRL—1399nm (0.886eV). ► We suggest new types of graded GaAsSb strain reducing layers covering InAs/GaAs QDs. ► The longest photoluminescence wavelength was achieved for decreasing Sb gradient in SRL. ► We achieved type I ground state transition at 1399nm, FWHM 35meV and intense RT PL. ► The experimental data were in agreement with theoretically expected behavior.