Details

Autor(en) / Beteiligte

• Hidayov, O.A
• Nam, N.H
• Yoon, G
• Han, S.K
• Lee, S.G

Titel

0.7–2.7 GHz wideband CMOS low-noise amplifier for LTE application

Ist Teil von

• Electronics letters, 2013-11, Vol.49 (23), p.1433-1435

Ort / Verlag

Stevenage: The Institution of Engineering and Technology

Erscheinungsjahr

2013

Link zum Volltext

Quelle

Wiley Online Library All Journals

Beschreibungen/Notizen

• A wideband low-noise amplifier (LNA) for long-term evolution applications is presented. A capacitive cross-coupled common-gate in combination with current-bleeding common-source topologies is adopted for wideband input matching, high gain and low noise figure (NF). Inter-cascade inductors are adopted to cancel the inter-stage parasitics, which extend input matching and operational bandwidth to higher frequency with additional NF reduction. Implemented in a 0.18 µm CMOS technology, the proposed wideband LNA shows a voltage gain of 17 dB, a NF of < 2.5 dB, |S11| of higher than 10 dB and a maximum IIP3 of + 1.52 dBm over the frequency range of 0.7–2.7 GHz while consuming 7.5 mA from a 1.8 V supply.