Details

Autor(en) / Beteiligte

• Vandooren, Anne
• Walke, Amey M
• Verhulst, Anne S
• Rooyackers, Rita
• Collaert, Nadine
• Thean, Aaron VY

Titel

Investigation of the Subthreshold Swing in Vertical Tunnel-FETs Using rm H 2 and rm D 2 Anneals

Ist Teil von

• IEEE transactions on electron devices, 2014-02, Vol.61 (2), p.359-364

Erscheinungsjahr

2014

Link zum Volltext

Quelle

IEEE/IET Electronic Library

Beschreibungen/Notizen

• This paper analyzes both experimentally and by simulation the impact of traps on the transfer characteristics of tunnel-FETs (TFETs). The interface trap density in vertical heterojunction TFETs is varied by annealing in hydrogen or deuterium ambient. We show that a high-interface trap density ( similar to 2 10 12 / rm cm 2 ) results in a peak current in the device transfer characteristic at low-gate bias due to surface generation of carriers. The passivation of interface traps to state-of-the-art densities near 1 - 2 10 11 / rm cm 2 reduces this peak, but improves only marginally the overall subthreshold swing, indicating that the trap-assisted tunneling responsible for the swing degradation is mainly occurring through bulk traps in these devices.