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Light controlled prebreakdown characteristics of a semi-insulating GaAs photoconductive switch
Ist Teil von
Journal of semiconductors, 2011-12, Vol.32 (12), p.80-85
Ort / Verlag
IOP Publishing
Erscheinungsjahr
2011
Link zum Volltext
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
A 4 mm gap semi-insulating （SI） GaAs photoconductive switch （PCSS） was triggered by a pulse laser with a wavelength of 1064 nm and a pulse energy of 0.5 mJ. In the experiment, when the bias field was 4 kV, the switch did not induce self-maintained discharge but worked in nonlinear （lock-on） mode. The phenomenon is analyzed as follows： an exciton effect contributes to photoconduction in the generation and dissociation of ex- citons. Collision ionization, avalanche multiplication and the exciton effect can supply carrier concentration and energy when an outside light source was removed. Under the combined influence of these factors, the S1-GaAs PCSS develops into self-maintained discharge rather than just in the light-controlled prebreakdown status. The characteristics of the filament affect the degree of damage to the switch.