Details

Autor(en) / Beteiligte

• Wang, Riyan
• Huang, Jiwei
• Li, Zhengping
• Zhang, Weifeng
• Zeng, Longyue

Titel

A 1.2-V CMOS front-end for LTE direct conversion SAW-less receiver

Ist Teil von

• Journal of semiconductors, 2012-03, Vol.33 (3), p.76-80

Erscheinungsjahr

2012

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• A CMOS RF front-end for the long-term evolution（LTE） direct conversion receiver is presented.With a low noise transconductance amplifier（LNA）,current commutating passive mixer and transimpedance operational amplifier（TIA）,the RF front-end structure enables high-integration,high linearity and simple frequency planning for LTE multi-band applications.Large variable gain is achieved using current-steering transconductance stages.A current commutating passive mixer with 25%duty-cycle LO improves gain,noise and linearity.A direct coupled current-input filter（DCF） is employed to suppress the out-of-band interferer.Fabricated in a 0.13-μm CMOS process,the RF front-end achieves a 45 dB conversion voltage gain,2.7 dB NF,-7 dBm IIP3,and ＋60 dBm IIP2 with calibration from 2.3 to 2.7 GHz.The total RF front end with divider draws 40 mA from a single 1.2-V supply.