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Structural and magnetic properties of Yb-implanted GaN
Ist Teil von
Journal of semiconductors, 2013-05, Vol.34 (5), p.16-19
Erscheinungsjahr
2013
Link zum Volltext
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
N-type, p-type and unintentionally-doped GaN were implanted with Yb ions by double energy ion im- plantation and the samples were annealed at 900 ℃. The structural and magnetic properties of the samples have been studied by high-resolution X-ray diffraction （HRXRD）, Raman scattering and with a superconducting quan- tum interference device （SQUID）. No second phase has been observed and implantation induced defects can not be completely removed by rapid thermal annealing. The annealed samples show magnetic anisotropy and clear ferromagnetic behavior at room temperature. P-, u- and n-GaN：Yb samples show an effective magnetic moment of 1.60, 1.24 and 0.59 μB/Yb, respectively.