Details

Autor(en) / Beteiligte

• Kayser, Y.
• Banaś, D.
• Cao, W.
• Dousse, J.-Cl
• Hoszowska, J.
• Jagodziński, P.
• Kavčič, M.
• Kubala-Kukuś, A.
• Nowak, S.
• Pajek, M.
• Szlachetko, J.

Titel

Depth profiles of Al impurities implanted in Si wafers determined by means of the high-resolution grazing emission X-ray fluorescence technique

Ist Teil von

• Spectrochimica acta. Part B: Atomic spectroscopy, 2010-06, Vol.65 (6), p.445-449

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

2010

Quelle

Elsevier ScienceDirect Journals

Beschreibungen/Notizen

• The synchrotron radiation based high-resolution grazing emission X-ray fluorescence (GEXRF) technique was used to extract the distribution of Al ions implanted with a dose of 10 16 atoms/cm 2 in Si wafers with energies ranging between 1 and 100 keV. The depth distributions of the implanted ions were deduced from the measured angular profiles of the Al-K α X-ray fluorescence line with nanometer-scale precision. The experimental results were compared to theoretical predictions of the depth distributions resulting from ion implantation. A good agreement between experiment and theory was found which proved that the presented high-resolution grazing emission X-ray fluorescence technique is well suited to perform depth profiling measurements of impurities located within the extinction depth, provided the overall shape of the distribution can be assumed a priori.