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Significant increase in conduction band discontinuity due to solid phase epitaxy of Al2O3 gate insulator films on GaN semiconductor
Ist Teil von
Applied physics letters, 2012-12, Vol.101 (23)
Erscheinungsjahr
2012
Link zum Volltext
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
We have investigated band discontinuities and chemical structures of Al2O3 gate insulator films on n-type GaN semiconductor by photoemission and x-ray absorption spectroscopy. It is found that the solid phase epitaxy at the GaN crystal during annealing procedures at 800 °C leads to phase transformation of Al2O3 films from amorphous to crystalline. Changes in crystallographic structures closely correlate with the significant increase in conduction band discontinuity at the Al2O3/GaN interface, which suggests that epitaxial Al2O3 films on GaN semiconductor, free from grain boundaries of Al2O3 polycrystalline, hold the potential for high insulation performance.