IEEE electron device letters, 2007-04, Vol.28 (4), p.273-275
2007
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Details
- Autor(en) / Beteiligte
- Titel
- Fast Thin-Film Transistor Circuits Based on Amorphous Oxide Semiconductor
- Ist Teil von
- IEEE electron device letters, 2007-04, Vol.28 (4), p.273-275
- Ort / Verlag
- New York, NY: IEEE
- Erscheinungsjahr
- 2007
- Quelle
- IEEE Xplore
- Beschreibungen/Notizen
- Five-stage ring oscillators (ROs) composed of amorphous In/Ga/Zn/O (a-IGZO) channel thin-film transistors (TFTs) with the channel lengths of 10 mum were fabricated on a glass substrate. The a-IGZO layer was deposited by RF magnetron sputtering onto the unheated substrate. The RO operated at 410 kHz (the propagation delay of 0.24 mus/stage), when supplied with an external voltage of +18 V. This is the fastest integrated circuit based on oxide-semiconductor channel TFTs to date that operates faster than the ROs using conventional hydrogenated amorphous silicon TFTs and organic TFTs
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0741-3106eISSN: 1558-0563DOI: 10.1109/LED.2007.893223Titel-ID: cdi_proquest_miscellaneous_1365155699
- Format
- –
- Schlagworte
- Amorphous magnetic materials, Amorphous materials, Amorphous semiconductors, Applied sciences, Channels, Circuit properties, Circuits, Design. Technologies. Operation analysis. Testing, Devices, Electric, optical and optoelectronic circuits, Electronic circuits, Electronics, Exact sciences and technology, Gallium, Glass, Integrated circuits, Magnetic semiconductors, Magnetron sputtering, Oscillators, resonators, synthetizers, oxide semiconductors, Radio frequency, Ring oscillators, ring oscillators (ROs), Semiconductor devices, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Semiconductors, sputtering, Substrates, Thin film transistors, thin-film transistors (TFTs), Transistors, Zinc