Details

Autor(en) / Beteiligte

• Arshi, Nishat
• Lu, Junqing
• Joo, Yun Kon
• Lee, Chan Gyu
• Yoon, Jae Hong
• Ahmed, Faheem

Titel

Influence of nitrogen gas flow rate on the structural, morphological and electrical properties of sputtered TiN films

Ist Teil von

• Journal of materials science. Materials in electronics, 2013-04, Vol.24 (4), p.1194-1202

Ort / Verlag

Boston: Springer US

Erscheinungsjahr

2013

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• In this work, nanocrystalline titanium nitride (TiN) films have been deposited by reactive DC magnetron sputtering technique on the Si/SiO 2 (100) substrates. The influence of nitrogen gas flow rate [0, 3, 5, 7 and 9 sccm (standard cubic centimeter per minute)] on the structural, morphological and electrical properties of the nanocrystalline TiN films has been studied. As-deposited TiN films have been characterized by using X-ray diffraction (XRD), XPS (X-ray photoelectron spectroscopy), FESEM (field emission scanning electron microscopy) and four point probe resistivity measurement, respectively. The XRD patterns revealed the HCP symmetry for pure Ti (N 2  = 0 sccm) with (002) preferred orientations, and the FCC symmetry for TiN (N 2  = 3, 5, 7 and 9 sccm) films having (111) preferred orientations. The lattice parameters were found to be a = 2.950 Ǻ, c = 4.681Ǻ for the Ti (N 2  = 0 sccm) film and a = 4.250Å for the TiN films. The presence of different phases such as TiN and TiO 2 were confirmed by XPS analysis. The FESEM images showed a smooth morphology of the film with columnar grain structures. The grain size of the TiN films was found to decrease from 22 to 15 nm as the nitrogen flow rate is increased from 0 to 9 sccm. The electrical resistivity measurement showed that the resistivity of the film increased from 11 × 10 −6 to 17 × 10 −6  Ohm cm on increasing nitrogen flow rate from 3 to 9 sccm, having the lowest resistivity of 11 × 10 −6  Ohm cm for the film deposited at 3 sccm nitrogen flow.