Details

Autor(en) / Beteiligte

• Thanh Trung, Pham
• Joucken, Frédéric
• Campos-Delgado, Jessica
• Raskin, Jean-Pierre
• Hackens, Benoît
• Sporken, Robert

Titel

Direct growth of graphitic carbon on Si(111)

Ist Teil von

• Applied physics letters, 2013-01, Vol.102 (1)

Erscheinungsjahr

2013

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Appropriate conditions for direct growth of graphitic films on Si(111) 7 × 7 are investigated. The structural and electronic properties of the samples are studied by Auger electron spectroscopy, X-ray photoemission spectroscopy, low energy electron diffraction (LEED), Raman spectroscopy, and scanning tunneling microscopy (STM). In particular, we present STM images of a carbon honeycomb lattice grown directly on Si(111). Our results demonstrate that the quality of graphene films formed depends not only on the substrate temperature but also on the carbon buffer layer at the interface. This method might be very promising for graphene-based electronics and its integration into the silicon technology.