Details

Autor(en) / Beteiligte

• Zhang, B. Y.
• Yang, C.
• Liu, W. F.
• Liu, A. M.

Titel

Origin of breakdown mechanism in multicrystalline silicon solar cells

Ist Teil von

• Applied physics letters, 2012-08, Vol.101 (9), p.93903

Erscheinungsjahr

2012

Quelle

AIP Journals Complete

Beschreibungen/Notizen

• The local breakdown behavior of multicrystalline silicon solar cells occurring at reverse bias voltages of -10 V has been investigated by means of electroluminescence images and temperature dependent current density-voltage (J-V) measurements. Identification of temperature coefficient of breakdown current indicates that Zener effect is the dominating mechanism of the local breakdown (so-called type II breakdown). Investigations of the carrier transport mechanism under forward bias voltage suggest that there exist a large amount of defects in depletion region. The origin of type II breakdown is attributed to the defects in depletion region.