Details

Autor(en) / Beteiligte

• Matres, J
• Ballesteros, G C
• Gautier, P
• Fédéli, J-M
• Martí, J
• Oton, C J

Titel

High nonlinear figure-of-merit amorphous silicon waveguides

Ist Teil von

• Optics express, 2013-02, Vol.21 (4), p.3932-3940

Ort / Verlag

United States

Erscheinungsjahr

2013

Link zum Volltext

Quelle

MEDLINE

Beschreibungen/Notizen

• The nonlinear response of amorphous silicon waveguides is reported and compared to silicon-on-insulator (SOI) samples. The real part of the nonlinear coefficient γ is measured by four-wave-mixing and the imaginary part of γ is characterized by measuring the nonlinear loss at different peak powers. The combination of both results yields a two-photon-absorption figure of merit of 4.9, which is more than 7 times higher than for the SOI samples. Time-resolved measurements and simulations confirm the measured nonlinear coefficient γ and show the absence of slow free-carrier effects versus ns free-carrier lifetimes in the SOI samples.