Details

Autor(en) / Beteiligte

• Makhova, L
• Konovalov, I

Titel

Influence of the Polarization and the Temperature on the Surface Potential and the Band Diagram in ZnO/BaTiO sub(3) Heterostructure

Ist Teil von

• Ferroelectrics, 2012-01, Vol.429 (1), p.1-6

Erscheinungsjahr

2012

Quelle

Taylor & Francis 数据库

Beschreibungen/Notizen

• Using of ZnO semiconductor/BaTiO sub(3) ferroelectric heterojunction for multifunctional devices requires the determination of valence band offset (VBO) at the heterointerface. VBO at ZnO/BaTiO sub(3) interface was measured using in situ x-ray photoelectron spectroscopy and was calculated from energy difference between core levels (CLs) in the heterostructure and energy difference between CLs and valence band (VB) of pure materials. VBO is determined to be -0.70 plus or minus 0.09 eV. A noticeable influence of polarization and heating of the sample through Curie temperature on change of VB energies referred to energies of CLs was not observed. The VBO is independent of the polarisation in ferroelectric.