Applied physics. A, Materials science & processing, 2000-12, Vol.71 (6), p.615-618
2000
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Details
- Autor(en) / Beteiligte
- Titel
- Oxygen-segregation-controlled epitaxy of Y2O3 films on Nb(110)
- Ist Teil von
- Applied physics. A, Materials science & processing, 2000-12, Vol.71 (6), p.615-618
- Ort / Verlag
- Berlin: Springer
- Erscheinungsjahr
- 2000
- Quelle
- Alma/SFX Local Collection
- Beschreibungen/Notizen
- We demonstrate a very simple and reliable method of manufacturing clean, single-crystalline Y2O3 films on Nb(110) substrates in situ. The method exploits the oxygen bulk contamination of Nb as a source of clean oxygen. For substrate temperatures above 800 K oxygen segregation to the Nb surface is so efficient, that yttrium becomes oxidized during deposition without any background oxygen pressure required in the ultrahigh vacuum system. The crystallinity and stoichiometry of these films can be tuned by the deposition temperature. For Y deposition at 1300 K the formation of well-ordered (111)-oriented Y2O3 films is achieved.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0947-8396eISSN: 1432-0630DOI: 10.1007/s003390000569Titel-ID: cdi_proquest_miscellaneous_1283681857
- Format
- –
- Schlagworte
- Cleaning, Condensed matter: structure, mechanical and thermal properties, Cross-disciplinary physics: materials science, rheology, Crystallinity, Deposition, Exact sciences and technology, Materials science, Methods of deposition of films and coatings, film growth and epitaxy, Niobium, Physics, Segregations, Stoichiometry, Structure and morphology, thickness, Surfaces and interfaces, thin films and whiskers (structure and nonelectronic properties), Thin film structure and morphology, Ultrahigh vacuum, Vacuum deposition, Yttrium oxide