Physica. B, Condensed matter, 2010-08, Vol.405 (16), p.3433-3435
2010
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Details
- Autor(en) / Beteiligte
- Titel
- Quantitative strain characterization of SiGe heterostructures by high-resolution transmission electron microscopy
- Ist Teil von
- Physica. B, Condensed matter, 2010-08, Vol.405 (16), p.3433-3435
- Ort / Verlag
- Kidlington: Elsevier B.V
- Erscheinungsjahr
- 2010
- Quelle
- Alma/SFX Local Collection
- Beschreibungen/Notizen
- We report the quantitative strain characterization in semiconductor heterostructures of silicon–germaniums (Si 0.76Ge 0.24) grown on Si substrate by an ultra-high vacuum chemical vapor deposition system. The relaxed SiGe virtual substrate has been achieved by thermal annealing of the SiGe film with an inserted Ge layer. Strain analysis was performed using a combination of high-resolution transmission electron microscopy and geometric phase analysis.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0921-4526eISSN: 1873-2135DOI: 10.1016/j.physb.2010.05.018Titel-ID: cdi_proquest_miscellaneous_1266754623
- Format
- –
- Schlagworte
- Condensed matter, Condensed matter: structure, mechanical and thermal properties, Electron microscopy, Exact sciences and technology, Germanium, Heterostructures, High-resolution Transmission electron microscopy, Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties, Mechanical and acoustical properties, Physical properties of thin films, nonelectronic, Physics, Semiconductors, Si/Ge heterostructures, Silicon germanides, Silicon substrates, Strain, Surfaces and interfaces, thin films and whiskers (structure and nonelectronic properties)