Details

Autor(en) / Beteiligte

• Sun, Zhenhua
• Liu, Zhike
• Li, Jinhua
• Tai, Guo-an
• Lau, Shu-Ping
• Yan, Feng

Titel

Infrared Photodetectors Based on CVD-Grown Graphene and PbS Quantum Dots with Ultrahigh Responsivity

Ist Teil von

• Advanced materials (Weinheim), 2012-11, Vol.24 (43), p.5878-5883

Ort / Verlag

Weinheim: WILEY-VCH Verlag

Erscheinungsjahr

2012

Quelle

Wiley-Blackwell Journals

Beschreibungen/Notizen

• Infrared photodetectors based on single‐layer CVD‐grown graphene and PbS quantum dots, which are fabricated by solution processing, show ultrahigh responsivities of up to 107 A/W under infrared light illumination. The devices fabricated on flexible plastic substrates have excellent bending stability. The photoresponse is attributed to the field‐effect doping in graphene films induced by negative charges generated in the quantum dots.