Details

Autor(en) / Beteiligte

• Catalan, G.
• Seidel, J.
• Ramesh, R.
• Scott, J. F.

Titel

Domain wall nanoelectronics

Ist Teil von

• Reviews of modern physics, 2012-02, Vol.84 (1), p.119-156

Erscheinungsjahr

2012

Quelle

American Physical Society Journals

Beschreibungen/Notizen

• The formation of domains in thin films of ferroelectrics, ferromagnets, ferroelastics, or multiferroics can be thought of as a consequence of a finite-size effect driven by a minimization of a surface energy. This review, which focuses on ferroelectrics, describes the energetics of domain formation and how domain walls can act as mobile interfaces suited to a variety of nanoelectronic devices. High-resolution studies at the atomic scale reveal functional properties within domain walls of magnetoelectric materials and broadens the discussion to include comparisons to magnetic materials and multiferroics.