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Investigation of a-Si (N+)/c-Si (P) hetero-junction solar cell through AFORS-HET simulation
Surface and interface analysis, 2011-09, Vol.43 (9), p.1211-1217
Wang, J. Q.
Meng, F. Y.
Fang, Z. D.
Ye, Q. H.
2011
Details
Autor(en) / Beteiligte
Wang, J. Q.
Meng, F. Y.
Fang, Z. D.
Ye, Q. H.
Titel
Investigation of a-Si (N+)/c-Si (P) hetero-junction solar cell through AFORS-HET simulation
Ist Teil von
Surface and interface analysis, 2011-09, Vol.43 (9), p.1211-1217
Ort / Verlag
Chichester, UK: John Wiley & Sons, Ltd
Erscheinungsjahr
2011
Link zum Volltext
Quelle
Wiley Online Library - AutoHoldings Journals
Beschreibungen/Notizen
In this paper, a TCO/a‐Si(N+)/a‐Si(i)/c‐Si(P)/Al‐BSF(P+) structure hetero‐junction (HJ) cell model is developed. With AFORS‐HET V3.0, we investigate the influence of amorphous silicon (a‐Si) emitter and amorphous silicon (a‐Si)/crystalline silicon (c‐Si) interface defects on the HJ cell performance. Through modulating a‐Si(N+) emitter doping concentration and band offset at a‐Si/c‐Si interface, a maximum width value of 103 nm inversion layer is observed in the c‐Si(P) side. For 1 Ω.cm c‐Si (P) substrate, emitter doping of over 1 × 1020 cm−3 is necessary for achieving a high‐efficiency a‐Si/c‐Si HJ cell. Furthermore, defects at a‐Si(N+)/c‐Si(P) interface severely affect the open circuit voltage (Voc) and short circuit current density (Jsc) of the cell. Meanwhile, simulation indicates that Voc is more sensitive to interface defect density (Dit) than Jsc. A thin a‐Si(i) layer between a‐Si(N+) and c‐Si(P) does induce great improvement in Voc of TCO/a‐Si(N+)/a‐Si(i)/c‐Si(P)/Al‐BSF(P+) cell. As a result, high cell efficiency of 22.27% is achieved for a‐Si(N+)/c‐Si(P) HJ Cell with optimized parameters. Copyright © 2010 John Wiley & Sons, Ltd.
Sprache
Englisch
Identifikatoren
ISSN: 0142-2421, 1096-9918
eISSN: 1096-9918
DOI: 10.1002/sia.3701
Titel-ID: cdi_proquest_miscellaneous_1022868580
Format
–
Schlagworte
a-Si(N+)/c-Si(P)
,
Aluminum
,
Amorphous silicon
,
Applied sciences
,
Condensed matter: electronic structure, electrical, magnetic, and optical properties
,
Crystal defects
,
Density
,
Doping
,
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
,
Electronic transport in interface structures
,
Emittance
,
emitter doping
,
Energy
,
Exact sciences and technology
,
interface defect density
,
Natural energy
,
Open circuit voltage
,
Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions
,
Photoelectric conversion: solar cells and arrays
,
Photovoltaic conversion
,
Physics
,
Solar cells. Photoelectrochemical cells
,
Solar energy
,
Volatile organic compounds
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