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Fabrication of silicon oxide nanowires on Ni coated silicon substrate by simple heating process
Ist Teil von
Materials science and technology, 2012-02, Vol.27 (1), p.30-33
Ort / Verlag
London: Taylor & Francis
Erscheinungsjahr
2012
Link zum Volltext
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
Silicon oxide nanowires may have many applications due to their electrical, mechanical and optical properties. Many methods have been reported for the synthesis of SiO
x
nanowires. In this paper, previously, we made Ni/SiO
2
/Si substrates by dry oxidation and nickel sputtering. Then, we successfully fabricated SiO
x
nanowires on Ni/SiO
2
/Si substrates with hydrogen gas using simple heating process. We figured out the best temperature and best time duration for SiO
x
nanowire fabrication on Ni/SiO
2
/Si substrate. Field emission scanning electron microscopy, field emission transmission electron microscopy, energy dispersive X-ray spectroscopy and X-ray diffraction were performed to analyse these nanowires.