Details

Autor(en) / Beteiligte

• Tsai, C.Y.
• Lou, B.Y.
• Hsu, H.H.
• Wu, Albert T.

Titel

Current redistribution by intermetallic compounds in Through-Silicon-Via (TSV)

Ist Teil von

• Materials chemistry and physics, 2012-01, Vol.132 (1), p.162-165

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

2012

Quelle

Access via ScienceDirect (Elsevier)

Beschreibungen/Notizen

• ► The intermetallic compound, Al 2Cu, has similar resistivity with Ni. ► The growth of the intermetallic compound, Al 2Cu, detours the current paths and reduces the current crowding. ► A mathematic model successfully predicts the occurrence of early failure in the samples, based on the methodology. ► Simulation results proved the experimental phenomena and the mathematic analyses. Bi-metallic thin film redistribution layers, deposited in the Through-Silicon-Via (TSV), were stressed by electrical current for failure analysis. A new mechanism suggested that the formation of intermetallic compounds, at the corners of the vias, redistributed and reduced the electrical current at the current crowding region. This study proposes a model and deduces a kinetic analysis to demonstrate the effect of the current distribution caused by the volume of the compound. A simulation was used to substantiate the experimental and analytical results.