Details

Autor(en) / Beteiligte

• Oxland, R.
• Chang, S. W.
• Xu Li
• Wang, S. W.
• Radhakrishnan, G.
• Priyantha, W.
• van Dal, M. J. H.
• Hsieh, C. H.
• Vellianitis, G.
• Doornbos, G.
• Bhuwalka, K.
• Duriez, B.
• Thayne, I.
• Droopad, R.
• Passlack, M.
• Diaz, C. H.
• Sun, Y. C.

Titel

An Ultralow-Resistance Ultrashallow Metallic Source/Drain Contact Scheme for III-V NMOS

Ist Teil von

• IEEE electron device letters, 2012-04, Vol.33 (4), p.501-503

Ort / Verlag

New York, NY: IEEE

Erscheinungsjahr

2012

Link zum Volltext

• IEEE_Xplore

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• We report an ultrashallow metallic source/drain (S/D) contact scheme for fully self-aligned III-V NMOS with specific contact resistivity and sheet resistance which, for the first time, demonstrate performance metrics that may be compatible with the ITRS R ext requirements for 12-nm technology generation device pitch. The record specific contact resistivity between the contact pad and metallic S/D of ρ c = 2.7 ·10 -9 Ω·cm 2 has been demonstrated for 10 nm undoped InAs channels by forming an ultrashallow crystalline ternary NiInAs phase with R sh = 97 Ω/sq for a junction depth of 7 nm. The junction depth of the S/D scheme is highly controllable and atomically abrupt.