Details

Autor(en) / Beteiligte

• Buckers, C.
• Imhof, S.
• Thranhardt, A.
• Hader, J.
• Moloney, J.V.
• Koch, S.W.

Titel

Microscopic Modeling of Quantum Well Gain Media for VECSEL Applications

Ist Teil von

• IEEE journal of selected topics in quantum electronics, 2009-05, Vol.15 (3), p.984-992

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2009

Link zum Volltext

• Volltext

Quelle

IEEE Electronic Library (IEL)

Beschreibungen/Notizen

• This paper summarizes a consistent microscopic approach that allows for predictive calculations of laser gain/absorption, photoluminescence, and the intrinsic laser loss processes. The theory is first evaluated for an (AlGaIn)As quantum well system used in a vertical-external-cavity surface-emitting laser structure. Good agreement with experimental results is demonstrated. In a second application, the microscopic approach is used to predict the optical properties of novel dilute bismide containing GaAs-based quantum well gain media. Modeling the bismuth-induced band structure modifications by a valence band anticrossing model, the material gain, radiative, and Auger losses are computed.