Details

Autor(en) / Beteiligte

• Baeumler, Martina
• Börner, Frank
• Kretzer, Ulrich
• Scheffer-Czygan, Max
• Bünger, Thomas
• Wagner, Joachim

Titel

Spatial variations of carrier and defect concentration in VGF GaAs:Si

Ist Teil von

• Journal of materials science. Materials in electronics, 2008-12, Vol.19 (Suppl 1), p.165-170

Ort / Verlag

Boston: Springer US

Erscheinungsjahr

2008

Quelle

SpringerNature Journals

Beschreibungen/Notizen

• Wafers cut from Si-doped vertical gradient freeze (VGF) GaAs crystals with silicon concentration varying from 1.5 to 3.4 × 10 18  cm −3 have been investigated by low temperature photoluminescence topography. Carrier concentration maps were calculated from intensity topograms recorded on the high-energy slope of the band-to-band recombination, which depends on the carrier concentration predominantly due to band renormalization and band filling. Comparison to maps recorded on the B As -related PL band reveal a clear anti-correlation consistent with the view of B As complex formation.