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Carbon nanotube thin-film transistors
1
are expected to enable the fabrication of high-performance
2
, flexible
3
and transparent
4
devices using relatively simple techniques. However, as-grown nanotube networks usually contain both metallic and semiconducting nanotubes, which leads to a trade-off between charge-carrier mobility (which increases with greater metallic tube content) and on/off ratio (which decreases)
5
. Many approaches to separating metallic nanotubes from semiconducting nanotubes have been investigated
6
,
7
,
8
,
9
,
10
,
11
, but most lead to contamination and shortening of the nanotubes, thus reducing performance. Here, we report the fabrication of high-performance thin-film transistors and integrated circuits on flexible and transparent substrates using floating-catalyst chemical vapour deposition followed by a simple gas-phase filtration and transfer process. The resulting nanotube network has a well-controlled density and a unique morphology, consisting of long (~10 µm) nanotubes connected by low-resistance Y-shaped junctions. The transistors simultaneously demonstrate a mobility of 35 cm
2
V
–1
s
–1
and an on/off ratio of 6 × 10
6
. We also demonstrate flexible integrated circuits, including a 21-stage ring oscillator and master–slave delay flip-flops that are capable of sequential logic. Our fabrication procedure should prove to be scalable, for example, by using high-throughput printing techniques.
Carbon nanotube transistors with high mobilities and high on/off ratios are demonstrated, along with flexible nanotube-based integrated circuits that are capable of sequential logic.